Sn diffusion during Ni germanide growth on Ge1–<i>x</i>Sn<i>x</i>

Abstract

We report on the redistribution of Sn during Ni germanide formation on Ge1–xSnx/〈Ge(100)〉 and its influence on the thin film growth and properties. These results show that the reaction involves the formation of Ni5Ge3 and NiGe. Sn redistributes homogenously in both phases, in which the Sn/Ge ratio retains the ratio of the as-deposited Ge1–xSnx film. Sn continues to diffuse after full NiGe formation and segregates in two regions: (1) at the interface between the germanide and Ge1–xSnx and (2) at the surface, which has major implications for the thin film and contact properties.