Applied Physics Letters · 2008 · 55 citations · 8 references
Natural SciencesMaterials EngineeringMaterials ScienceInorganic ChemistryMaterials ChemistrySolid-state ChemistryCrystal GrowthCrystallographyGrain GrowthGrain Structure FormationKinetics Of Phase TransformationsSurface CrystallographyCrystallographic OrientationFilm Growth MechanismsGrain BoundariesGrowth KineticsLow SolubilityRutherford Backscattering SpectrometryRutherford ScatteringSolubility
We report on a real-time Rutherford backscattering spectrometry study of the erratic redistribution of Pt during Ni silicide formation in a solid phase reaction. The inhomogeneous Pt redistribution in Ni(Pt)Si films is a consequence of the low solubility of Pt in Ni2Si compared to NiSi and the limited mobility of Pt in NiSi. Pt further acts as a diffusion barrier and resides in the Ni2Si grain boundaries, significantly slowing down the Ni2Si and NiSi growth kinetics. Moreover, the observed incorporation of a large amount of Pt in the NiSi seeds indicates that Pt plays a major role in selecting the crystallographic orientation of these seeds and thus in the texture of the resulting Ni1−xPtxSi film.
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