J. Demeulemeester

Crystalline Properties and Strain Relaxation Mechanism of CVD Grown GeSn

Federica Gencarelli, Benjamin Vincent, J. Demeulemeester et al. · ECS Journal of Solid State Science and Technology · 2013 · 127 citations · Full text

Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors

Benjamin Vincent, Yosuke Shimura, Shotaro Takeuchi et al. · Microelectronic Engineering · 2010 · 105 citations

Materials Science, Electrical Engineering, Engineering +7

Pt redistribution during Ni(Pt) silicide formation

J. Demeulemeester, D. Smeets, C. Van Bockstael et al. · Applied Physics Letters · 2008 · 53 citations

Materials Science, Inorganic Chemistry, Nisi Seeds +15

Mapping interfacial excess in atom probe data

Peter Felfer, Barbara Scherrer, J. Demeulemeester et al. · Ultramicroscopy · 2015 · 42 citations

Physics, Microscopy, Natural Sciences +7

Ge1−Sn stressors for strained-Ge CMOS

Shotaro Takeuchi, Yosuke Shimura, Takashi Nishimura et al. · Solid-State Electronics · 2011 · 34 citations

Ge1−sn Stressors, Electrical Engineering, Engineering +4