Interfacial effects during GaN growth on 6H-SiC

GaN Growth Using GaN Buffer Layer

Shuji Nakamura Shuji Nakamura · Japanese Journal of Applied Physics · 1991 · 1.3K citations

Engineering, Electrical Engineering, Materials Science +15

Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy

Yoshiki Kato, Shota Kitamura, Kazumasa Hiramatsu et al. · Journal of Crystal Growth · 1994 · 316 citations

Engineering, Materials Engineering, Materials Science +17

ARXPS studies of SiO₂-SiC interfaces and oxidation of 6H SiC single crystal Si-(001) and C-(00<ovl>1</ovl>) surfaces

B. Hornetz, H-J. Michel, J. Halbritter · Journal of materials research/Pratt's guide to venture capital sources · 1994 · 276 citations

Natural Sciences, Materials Engineering, Materials Science +14

Silicon Carbide Electronic Materials and Devices

Michael A. Capano, R.J. Trew · MRS Bulletin · 1997 · 148 citations

Engineering, Materials Engineering, Materials Science +12

Electrical characterization of GaN/SiC n-p heterojunction diodes

John T. Torvik, M. W. Leksono, J. I. Pánkové et al. · Applied Physics Letters · 1998 · 60 citations

Engineering, Electrical Engineering, Materials Science +17