John T. Torvik - Concepedia

Author

John T. Torvik

University of Colorado Boulder

Also Known As

J. T. Torvik, J. Torvik, J.T Torvik, J.T. Torvik, John T Torvik, John T. Torvik, John Torvik

Publications

Citations

H-Index

Concepts

All Affiliations

University of Colorado Boulder Spire Corporation (United States)Atmospheric and Space Technology Research Associates (United States)Institute of High Pressure Physics Polish Academy of Sciences

About

John T. Torvik is an author at University of Colorado Boulder specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	15	817
2	Applied Physics	14	14	531
3	Electrical Engineering	14	14	794
4	Chemical Engineering	1	1	286
5	Chemistry	1	1	38

John T. Torvik

Publications

946

Citations

H-Index

Page 1

	Year	Citations
Photovoltaic manufacturing: Present status, future prospects, and research needs Colin A. Wolden, Juanita Kurtin, Jason B. Baxter, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Materials SciencePresent StatusElectrical EngineeringChemical EngineeringCrystalline Silicon	2011	286
A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C John T. Torvik, M. W. Leksono, J. I. Pánkové, MRS Internet Journal of Nitride Semiconductor Research	1999	129
Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN John T. Torvik, C. H. Qiu, R. J. Feuerstein, Journal of Applied Physics Oxygen Co-implanted GanElectrical EngineeringOptical MaterialsElectronic DevicesLuminescence Lifetimes	1997	95
Electroluminescence from erbium and oxygen coimplanted GaN John T. Torvik, R. J. Feuerstein, J. I. Pánkové, Applied Physics Letters Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringSolid-state Lighting	1996	67
Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates C. H. Qiu, M. W. Leksono, J. I. Pánkové, Applied Physics Letters Optical MaterialsEngineeringInfrared PeakRoom-temperature Optical DevicesOptoelectronic Devices	1995	65
Electrical characterization of GaN/SiC n-p heterojunction diodes John T. Torvik, M. W. Leksono, J. I. Pánkové, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesSaturation Currents	1998	60
Optical characterization of GaN/SiC n-p heterojunctions and p-SiC John T. Torvik, Changhua Qiu, M. W. Leksono, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringOptical MaterialsElectronic Devices	1998	40
Molecular doping of gallium nitride J. I. Pánkové, John T. Torvik, Chen Qiu, Applied Physics Letters Energy Band GapPhotoconductivity ExperimentsElectrical EngineeringWide-bandgap SemiconductorEngineering	1999	38
Comparison of GaN and 6H-SiC p-i-n photodetectors with excellent ultraviolet sensitivity and selectivity John T. Torvik, J. I. Pánkové, Bart J. Van Zeghbroeck IEEE Transactions on Electron Devices Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringSic PhotodetectorsEngineering	1999	30
Annealing Study of Erbium and Oxygen Implanted Gallium Nitride John T. Torvik, R. J. Feuerstein, C. H. Qiu, MRS Proceedings Materials EngineeringMaterials ScienceEngineeringApplied PhysicsGallium Oxide	1996	23

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