M. W. Leksono

A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

John T. Torvik, M. W. Leksono, J. I. Pánkové et al. · MRS Internet Journal of Nitride Semiconductor Research · 1999 · 129 citations · Full text

Study of defect states in GaN films by photoconductivity measurement

Chen Qiu, C. Hoggatt, W. Melton et al. · Applied Physics Letters · 1995 · 116 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +13

Cathodoluminescence study of erbium and oxygen coimplanted gallium nitride thin films on sapphire substrates

C. H. Qiu, M. W. Leksono, J. I. Pánkové et al. · Applied Physics Letters · 1995 · 65 citations

Optical Materials, Engineering, Infrared Peak +18

Electrical characterization of GaN/SiC n-p heterojunction diodes

John T. Torvik, M. W. Leksono, J. I. Pánkové et al. · Applied Physics Letters · 1998 · 60 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +12

Photocurrent decay in <i>n</i>-type GaN thin films

C. H. Qiu, W. Melton, M. W. Leksono et al. · Applied Physics Letters · 1996 · 42 citations

Semiconductors, Wide-bandgap Semiconductor, Semiconductor Technology +13