Journal of Electronic Materials · 1993 · 10 citations · 6 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsAmorphous Electronic MaterialsAmorphous MaterialsAmorphous SolidsSemiconductor PhysicsSemiconductor Thin FilmsThin Film AnnealingAmorphous State CharacterizationAnnealing EffectsAnnealing Temperature EffectsSemiconductor CharacterizationThin-film Semiconductors
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New MBE buffer used to eliminate backgating in GaAs MESFETs
F. W. Smith, A. R. Calawa, C.-L. Chen et al. · IEEE Electron Device Letters · 1988 · 623 citations
Anomalies in MODFET's with a low-temperature buffer
Barry Lin, Chris Kocot, D. E. Mars et al. · IEEE Transactions on Electron Devices · 1990 · 54 citations
Optical characterization of the electrical properties of processed GaAs
O. J. Glembocki, John A. Dagata, E. S. Snow et al. · Applied Surface Science · 1993 · 27 citations
Defects in low-temperature-grown GaAs annealed at 800 °C
I. Ohbu, M. Takahama, Kei Hiruma · Applied Physics Letters · 1992 · 25 citations