Electronics Letters · 1996 · 26 citations · 1 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyIii-v SemiconductorsIntegrated Circuit FabricationMetal-oxide-semiconductor Field-effect TransistorsSemiconductor Device MaterialsShort-channel EffectsCmos Fabrication ProcessesSelective Area EpitaxySilicon Germanium Bipolar TransistorSubthreshold OperationThreshold VoltageTransconductance
Vertical p-MOS transistors with channel lengths of ~130 nm have been fabricated using selective LPCVD epitaxy for the definition of the channel region, instead of fine line lithography. Owing to self-aligned facet growth the channel region and the volume diode which limited the parasitic bipolar transistor can be designed more independently. Thus a short-channel p-MOS transistor with a high breakthrough voltage, an ideal subthreshold behaviour and a high transconductance was fabricated.
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Vertical MOS technology with sub-0.1 µm channellengths
F. Wittmann, I. Eisele, T. Grabolla et al. · Electronics Letters · 1995 · 34 citations
Engineering, Electrical Engineering, Electronic Materials +12