J. Moers

Hall effect measurements on InAs nanowires

Ch. Blömers, Thomas Grap, Mihail Ion Lepsa et al. · Applied Physics Letters · 2012 · 100 citations

Electrical Engineering, Engineering, Physics +9

X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

N. Hrauda, Jianjun Zhang, E. Wintersberger et al. · Nano Letters · 2011 · 75 citations · Full text

N-Channel field-effect transistors with floating gates for extracellular recordings

Sven Meyburg, Michael Goryll, J. Moers et al. · Biosensors and Bioelectronics · 2005 · 50 citations

Electrical Engineering, Medical Electronics, Engineering +7

n-Channel MOSFETs Fabricated on SiGe Dots for Strain-Enhanced Mobility

V D Jovanovi, C. Biasotto, Lis K. Nanver et al. · IEEE Electron Device Letters · 2010 · 42 citations

Engineering, Optoelectronic Devices, Silicon On Insulator +16

Broadband transmission masks, gratings and filters for extreme ultraviolet and soft X-ray lithography

Sascha Brose, Serhiy Danylyuk, Larissa Juschkin et al. · Thin Solid Films · 2012 · 31 citations

Photonics, Engineering, Electron-beam Lithography +11