Statistics
Publications
6
Citations
129
H-Index
6
Active since
1995
D. Behammer is an author at Ruhr University Bochum specializing in electrical engineering, engineering, and microelectronics.
Publications per year
1995–2003
6
6
Vertical MOS technology with sub-0.1 µm channellengths
F. Wittmann, I. Eisele, T. Grabolla et al. · Electronics Letters · 1995 · 34 citations
Engineering, Electrical Engineering, Electronic Materials +12
High-frequency SiGe-n-MODFET for microwave applications
M. Zeuner, T. Hackbarth, G. Höck et al. · IEEE Microwave and Guided Wave Letters · 1999 · 33 citations
Transimpedance amplifiers based on Si/SiGe MODFETs
M. Saxarra, Michael Glück, J.N. Albers et al. · Electronics Letters · 1998 · 14 citations
Si/SiGe HBTs for application in low power ICs
D. Behammer, J.N. Albers, U. König et al. · Solid-State Electronics · 1996 · 11 citations
Engineering, Computer Engineering, Electrical Engineering +12
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