IEEE Transactions on Electron Devices · 2012 · 18 citations · 7 references
EngineeringComputer EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesDesign For TestabilityDevice CharacterizationDevice ModelingDevice SimulationElectrical CharacterizationIntegrated Circuit DesignCharged Device ModelCircuit SimulationCompact ModelingElectric Circuit ModelsElectrical ResistivityElectrostatic DischargeResistivity
The electrostatic discharge (ESD) sensitivity of ICs with respect to the charged-device model (CDM) is strongly dependent on the IC package, the substrate resistivity, and the effectiveness of the ESD protection network. This paper presents a case study of predictive CDM circuit simulation method based on the tester, package, and full IC modeling approach.
7
Reliability aspects of gate oxide under ESD pulse stress
Adrien Ille, Wolfgang Stadler, T. Pompl et al. · 2007 · 45 citations
Engineering, Electrical Engineering, Electronic Materials +13
Effect of large device capacitance on FICDM peak current
Bruce C. Atwood, Yuanzhong Zhou, Dave Clarke et al. · 2007 · 38 citations
Horst Gieser, Heinrich Wolf, Wolfgang Soldner et al. · Publikationsdatenbank der Fraunhofer-Gesellschaft (Fraunhofer-Gesellschaft) · 2003 · 14 citations