Extreme ultraviolet microexposures at the Advanced Light Source using the 0.3 numerical aperture micro-exposure tool optic

Abstract

In an effort to continue the rapid pace of extreme ultraviolet (EUV) learning, the focus of developmental EUV lithography has shifted from low numerical aperture (NA) tools such as the 0.1NA engineering test stand to higher NA tools such as the 0.3NA micro-exposure tool (MET). To support this generation of lithographic optics, a static printing station has been developed at the Advanced Light Source. This synchrotron-based printing system relies on a scanning illuminator to provide real-time coherence (pupil-fill) control. Here, we describe a MET printing station and present early printing results obtained with the Sematech Set-2 MET optic. The resolution limit of baseline EUV resist is presented as well as 30nm equal-line-space printing in an experimental resist.