Design and analysis of MoS<inf>2</inf>-based MOSFETs for ultra-low-leakage dynamic memory applications

Abstract

In this work, we describe the design space required to realize two-dimensional (2D) MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> low-leakage MOSFETs. We combine TCAD electrostatic simulations with an analytical transport model to predict the subthreshold performance of MoS <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> MOSFETs. We further apply this model to a dynamic memory cell design and benchmark the performance advantages compared to conventional low-leakage silicon technology.