Initial nanoheteroepitaxial growth of GaAs on Si(100) by OMVPE

Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

Okhyun Nam, M. D. Bremser, Tsvetanka Zheleva et al. · Applied Physics Letters · 1997 · 651 citations

Engineering, Materials Engineering, Materials Science +17

Gallium arsenide and other compound semiconductors on silicon

S. F. Fang, K. Adomi, Swaminathan P. Iyer et al. · Journal of Applied Physics · 1990 · 584 citations

Engineering, Materials Engineering, Materials Science +17

Anisotropic epitaxial lateral growth in GaN selective area epitaxy

D. Kapolnek, S. Keller, R. Vetury et al. · Applied Physics Letters · 1997 · 302 citations

Engineering, Materials Engineering, Materials Science +15

Nanoheteroepitaxy: The Application of nanostructuring and substrate compliance to the heteroepitaxy of mismatched semiconductor materials

David Zubía, S. D. Hersee · Journal of Applied Physics · 1999 · 245 citations

Engineering, Materials Engineering, Materials Science +17

New approach to grow pseudomorphic structures over the critical thickness

Yu‐Hwa Lo · Applied Physics Letters · 1991 · 233 citations

Natural Sciences, Materials Engineering, Materials Science +17