Crystal Research and Technology · 1999 · 11 citations · 4 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDopingMetal SulfidesSemiconductor Device MaterialsSemiconductor HeterostructuresSemiconductor InterfacesSemiconductor PhysicsCapacitance-voltage CharacterizationCarrier ConcentrationCurrent-voltage CharacterizationElectrical PropertiesHeterostructuresLong-term StabilitySemiconductor CharacterizationZinc Selenide
The long-term stability of electrical parameters had been investigated for heterostructures based on lead sulphide films and zinc selenide during 3.5 years samples storage at normal ambient conditions. In order to clarify the time stability of electrical properties characterized the examined heterostructures the investigations of current-voltage and capacitance-voltage dependencies were performed. It was found that the heterostructures characterized by the carrier concentration of ZnSe substrate in range of (1.5-3.5)x1017 cm-3 manifested more stable current-voltage behavior than the heterostructures with the lower carrier concentration of the ZnSe substrate.
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H. C. Casey, M. B. Panish, T. A. Roth · Journal of The Electrochemical Society · 1979 · 1.7K citations
Polar heterojunction interfaces
Walter A. Harrison, E. A. Kraut, J. R. Waldrop et al. · Physical review. B, Condensed matter · 1978 · 628 citations
Natural Sciences, Materials Engineering, Materials Science +17
M.J. Hampshire · Microelectronics Reliability · 1975 · 77 citations