Applied Physics Letters · 1997 · 100 citations · 13 references
EngineeringElectrical EngineeringMaterials ScienceNanotechnologySemiconductor DevicesSemiconductor MaterialsAtomic Force MicroscopyEtching ProcessesIii-v SemiconductorsNanoelectronicsSemiconductor InterfacesSemiconductor Thin FilmsAtomic Layer EtchingEtch Mask FabricationNanostructure AnalysisNanostructure CharacterizationNanostructured SemiconductorsQuantum WiresSemiconductor NanostructuresThrough-wafer Etching
An atomic force microscope has been used to pattern nanometer-scale features in III–V semiconductors by cutting through a thin surface layer of a different semiconductor, which is then used as an etch mask. Cuts up to 10 nm deep, which pass through 2–5 nm thick epilayers of both GaSb and InSb, have been formed. Lines as narrow as 20 and 2 nm deep have been made. Selective etchants and a 5 nm GaSb etch mask are used to transfer patterns into an InAs epilayer. The results are promising for applications requiring trench isolation, such as quantum wires and in-plane gated structures.
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Nanometer-scale lithography using the atomic force microscope
Arun Majumdar, P. I. Oden, J. P. Carrejo et al. · Applied Physics Letters · 1992 · 191 citations
Natural Sciences, Materials Engineering, Materials Science +13
Role of relative humidity in atomic force microscopy imaging
Thomas Thundat, Xiao-Jun Zheng, G.Y. Chen et al. · Surface Science · 1993 · 115 citations