Concepedia
Journal of Crystal Growth · 1996 · 14 citations · 11 references
Materials ScienceSurface CharacterizationEngineeringSurface ChemistrySurface AnalysisSurface ScienceSurface Decomposition MechanismsSubstrate CleaningChemistryCrystallographyElemental Characterization
11
Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In0.1Ga0.9As
Trevor Martin, C. R. Whitehouse · Journal of Crystal Growth · 1990 · 104 citations
Rf Semiconductor, Physics, Natural Sciences +5
Surface topography changes during the growth of GaAs by molecular beam epitaxy
G. W. Smith, A. J. Pidduck, C. R. Whitehouse et al. · Applied Physics Letters · 1991 · 68 citations
Materials Science, Laser Light Scattering, Gaas Steps +14
Growth of GaAs and AlGaAs by metalorganic molecular beam epitaxy using tris-dimethylaminoarsenic
C. R. Abernathy, P. Wisk, D. A. Bohling et al. · Applied Physics Letters · 1992 · 61 citations
Materials Engineering, Materials Science, Epitaxial Growth +12
Surface reactions of dimethylaminoarsine during MOMBE of GaAs
Sateria Salim, Jiong Ping Lu, Klavs F. Jensen et al. · Journal of Crystal Growth · 1992 · 55 citations
Ii-vi Semiconductor, Engineering, Surface Reactions +4
Evolution of monolayer terrace topography on (100) GaAs annealed under an arsine/hydrogen ambient
J. E. Epler, Thomas A. Jung, H. Schweizer · Applied Physics Letters · 1993 · 35 citations
Engineering, Microscopy, Topographical Evolution +20