G. W. Smith - Concepedia

Author

G. W. Smith

University of Sheffield

Also Known As

G W Smith, G. W. Smith, G.W. Smith, G.W.D Smith, Gilbert Smith, Gilbert W. Smith, Gilbert Wheeler. Smith

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

University of Sheffield Worcestershire Royal Hospital Imperial College London University of Stuttgart University of Surrey

About

G. W. Smith is an author at University of Sheffield specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	35	1.4K
2	Applied Physics	19	30	1.1K
3	Natural Sciences	6	6	202
4	Arts	1	1	37
5	Education	1	1	34

G. W. Smith

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Anion Exchange Studies. IX. Adsorbability of a Number of Metals in Hydrochloric Acid Solutions Kurt A. Kraus, Frederick Nelson, G. W. Smith The Journal of Physical Chemistry EngineeringFrederick NelsonChemical AnalysisHydrochloric Acid SolutionsAltmetric Attention Score	1954	199
Biexciton creation and recombination in a GaAs quantum well R. T. Phillips, D. J. Lovering, G. J. Denton, Physical review. B, Condensed matter Quantum ScienceElectrical EngineeringPhotonicsEngineeringPhotoluminescence	1992	130
Focused ion-beam milling for field-ion specimen preparation: David J. Larson, D. T. Foord, A. K. Petford‐Long, Ultramicroscopy Materials ScienceIon ImplantationEngineeringMicrofabricationApplied Physics	1998	99
Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields M. S. Skolnick, D.G. Hayes, P.E. Simmonds, Physical review. B, Condensed matter Categoryquantum ElectronicsCharge ExcitationsEngineeringSequential TunnelingElectronic Processes	1990	81
Novel 1×<i>N</i> and <i>N</i>×<i>N</i> integrated optical switches using self-imaging multimode GaAs/AlGaAs waveguides Robert Jenkins, J.M. Heaton, D.R. Wight, Applied Physics Letters Optical MaterialsEngineeringOptoelectronic DevicesIntegrated CircuitsNovel 1×	1994	77
Real-time laser-light scattering studies of surface topography development during GaAs MBE growth G. W. Smith, A. J. Pidduck, C. R. Whitehouse, Journal of Crystal Growth EngineeringPhysicsOptical PropertiesApplied PhysicsLaser Applications	1993	73
Surface topography changes during the growth of GaAs by molecular beam epitaxy G. W. Smith, A. J. Pidduck, C. R. Whitehouse, Applied Physics Letters Materials ScienceLaser Light ScatteringGaas StepsAtomic Force MicroscopyEngineering	1991	68
Band anticrossing in GaNxSb1−x P. H. Jefferson, T. D. Veal, Louis F. J. Piper, Applied Physics Letters Wide-bandgap SemiconductorFourier TransformGansb Band StructureEngineeringPhysics	2006	57
Band gap reduction in GaNSb alloys due to the anion mismatch T. D. Veal, Louis F. J. Piper, S. Jollands, Applied Physics Letters Wide-bandgap SemiconductorEngineeringBand Gap ReductionBand GapSemiconductors	2005	54
In situ X-ray topography studies during the molecular beam epitaxy growth of InGaAs on (001) GaAs: effects of substrate dislocation distribution on strain relaxation S. J. Barnett, A.M. Keir, A.G. Cullis, Journal of Physics D Applied Physics Materials ScienceMaterials EngineeringLayer ThicknessEpitaxial GrowthEngineering	1995	53

Page 1