C. R. Whitehouse

Electronic energy levels and energy relaxation mechanisms in self-organized InAs/GaAs quantum dots

M. J. Steer, D. J. Mowbray, W. R. Tribe et al. · Physical review. B, Condensed matter · 1996 · 173 citations

Engineering, Photoluminescence Excitation, Luminescence Property +17

Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors

W. S. Tan, P. A. Houston, P. J. Parbrook et al. · Applied Physics Letters · 2002 · 116 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +11

Modulated-beam mass spectrometry studies of the MOMBE growth of (100) GaAs and In0.1Ga0.9As

Trevor Martin, C. R. Whitehouse · Journal of Crystal Growth · 1990 · 104 citations

Rf Semiconductor, Physics, Natural Sciences +5

Electronic processes in double-barrier resonant-tunneling structures studied by photoluminescence spectroscopy in zero and finite magnetic fields

M. S. Skolnick, D.G. Hayes, P.E. Simmonds et al. · Physical review. B, Condensed matter · 1990 · 81 citations · Full text

Categoryquantum Electronics, Charge Excitations, Engineering +22

Real-time laser-light scattering studies of surface topography development during GaAs MBE growth

G. W. Smith, A. J. Pidduck, C. R. Whitehouse et al. · Journal of Crystal Growth · 1993 · 73 citations

Engineering, Physics, Optical Properties +9