IEEE Electron Device Letters · 1992 · 81 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSensorsCmos Circuit DesignInfrared Optical MaterialsInfrared SpectroscopyTemperature SensorsThermal SensorsThermoelectric MaterialsInfrared SensorsNitride Thin FilmsPassivationSemiconductor Temperature SensorsSilicon NitrideSpectral Absorption BandsThermal Infrared SensorsThermal Sensing
The authors report two integrated thermoelectric infrared sensors on thin silicon oxide/nitride microstructures realized by industrial CMOS IC technology, followed by one compatible single maskless anisotropic etching step. No additional material is needed to enhance infrared absorption since the passivation layer, as provided by the CMOS process, is sufficient for certain spectral bands. The responsivities are between 12 and 28 V/W.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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A.W. van Herwaarden, D.C. van Duyn, B.W. van Oudheusden et al. · Sensors and Actuators A Physical · 1990 · 120 citations