RHEED-based measurements of atomic segregation at GaAs/AlAs interfaces

Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures

J. M. Moison, C. Guille, F. Houzay et al. · Physical review. B, Condensed matter · 1989 · 418 citations

Natural Sciences, Materials Science, Physics +17

Structure of AlAs-GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy

P. M. Petroff, A. C. Gossard, W. Wiegmann · Applied Physics Letters · 1984 · 401 citations

Engineering, Materials Engineering, Materials Science +17

Experimental evidence of difference in surface and bulk compositions of AlxGa1-xAs, AlxIn1-x As and GaxIn1-x As epitaxial layers grown by molecular beam epitaxy

J. Massies, F. Turco, A. Salètes et al. · Journal of Crystal Growth · 1987 · 100 citations

Natural Sciences, Materials Engineering, Materials Science +12

Atomic-scale roughness of GaAs/AlAs interfaces: A Raman scattering study of asymmetrical short-period superlattices

B. Jusserand, F. Mollot, J. M. Moison et al. · Applied Physics Letters · 1990 · 71 citations

Natural Sciences, Materials Science, Physics +17

RHEED studies of Ga desorption from GaAs and of As desorption from Si-doped GaAs during growth interruption

V. Thierry‐Mieg, François Laruelle, Bernard Etienne · Journal of Crystal Growth · 1993 · 10 citations

Engineering, Materials Engineering, Materials Science +12