Electrochemical and Solid-State Letters · 2004 · 10 citations · 3 references
EngineeringMaterials EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionCurrent-voltage CharacteristicsHigh-temperature PlasmasMemory DevicesSemiconductor Device MaterialsMemory Window OptimizationNonvolatile MemoryNonvolatile Memory DevicesNonvolatile Memory MaterialsPlasma-assisted Chemical Vapor DepositionSiliconSilicon NitrideThreshold Voltage
With the replacement of silicon nitride in an oxide/nitride/oxide (ONO) gate-stacked structure, trap-rich high-density plasma chemical vapor deposited (HDPCVD) shows a more significant threshold-voltage shift (memory window) than that of conventional low pressure (LP)CVD Also, low-temperature (200°C) deposited HDPCVD silicon nitride shows a good retention characteristic, the same as high-temperature (780°C) LPCVD With the optimization of thickness in the gate-stacked ONO structure, low-voltage and reliable operation, lower than 5 V, is realizable. © 2004 The Electrochemical Society. All rights reserved.
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NROM: A novel localized trapping, 2-bit nonvolatile memory cell
B. Eitan, Paolo Pavan, I. Bloom et al. · IEEE Electron Device Letters · 2000 · 547 citations · Full text
Engineering, Computer Engineering, Electrical Engineering +12
A low voltage SONOS nonvolatile semiconductor memory technology
M.H. White, Yi-Lin Yang, Ayush Purwar et al. · 2002 · 12 citations
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Jeong Hwan Park, Sang-Wook Park, Young-Taek Kong et al. · Journal of The Electrochemical Society · 2003 · 10 citations · Full text