Fast epitaxy by PVT of SiC in hydrogen atmosphere

Step bunching mechanism in chemical vapor deposition of 6H– and 4H–SiC{0001}

Tsunenobu Kimoto, Akira Itoh, Hiroyuki Matsunami et al. · Journal of Applied Physics · 1997 · 171 citations

Engineering, Materials Engineering, Materials Science +17

Growth of 6H and 4H–SiC by sublimation epitaxy

Mikael Syväjärvi, R. Yakimova, M. Tuominen et al. · Journal of Crystal Growth · 1999 · 84 citations

Engineering, Materials Engineering, Materials Science +14

Gaseous etching of 6H–SiC at relatively low temperatures

Zihao Xie, C. H. Wei, L.Y Li et al. · Journal of Crystal Growth · 2000 · 45 citations

Engineering, Materials Engineering, Materials Science +16

Structural improvement in sublimation epitaxy of 4H–SiC

Mikael Syväjärvi, R. Yakimova, Henrik Jacobsson et al. · Journal of Applied Physics · 2000 · 45 citations

Engineering, Materials Engineering, Materials Science +17

Studies of growth processes in silicon carbide epitaxial layers from the vapour phase

S. K. Lilov, Yu. M. Tairov, V. F. Tsvetkov et al. · Journal of Crystal Growth · 1976 · 13 citations

Natural Sciences, Materials Engineering, Materials Science +16