Journal of Crystal Growth · 2008 · 11 citations · 22 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsSemiconductor Device MaterialsSemiconductor Thin FilmsThin-film DepositionWide-bandgap Semiconductor DevicesGallium NitrideGallium Nitride (Gan) MaterialsGlass Substrate PreparationMagnetron SputteringNitrides Thin Films
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InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations
On the nature of the 3.41 eV luminescence in hexagonal GaN
Stefan Fischer, G. Steude, D.M. Hofmann et al. · Journal of Crystal Growth · 1998 · 79 citations