GaN on Si with nm-thick single-crystal Sc2O3 as a template using molecular beam epitaxy

Effect of temperature on Ga2O3(Gd2O3)/GaN metal–oxide–semiconductor field-effect transistors

F. Ren, M. Hong, S. N. G. Chu et al. · Applied Physics Letters · 1998 · 217 citations

Engineering, Electrical Engineering, Materials Science +17

High reflectivity and broad bandwidth AlN/GaN distributed Bragg reflectors grown by molecular-beam epitaxy

H. M. Ng, T. D. Moustakas, S. N. G. Chu · Applied Physics Letters · 2000 · 166 citations

Natural Sciences, Materials Engineering, Materials Science +17

Structural and electrical characteristics of atomic layer deposited high κ HfO2 on GaN

Yen‐Chung Chang, H. C. Chiu, Y. J. Lee et al. · Applied Physics Letters · 2007 · 120 citations

Engineering, Materials Engineering, Materials Science +17

Lattice-matched HfN buffer layers for epitaxy of GaN on Si

R. Armitage, Qing Yang, H. Feick et al. · Applied Physics Letters · 2002 · 70 citations · Full text

Engineering, Materials Engineering, Materials Science +15

Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric

Yen‐Chung Chang, Wen-Hsin Chang, H. C. Chiu et al. · Applied Physics Letters · 2008 · 60 citations

Engineering, Electrical Engineering, Materials Science +17