Buried layers of silicon oxy-nitride fabricated using ion beam synthesis

Fabrication of buried layers of SiO2 and Si3N4 a using ion beam synthesis

K.J. Reeson · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1987 · 104 citations

Engineering, Materials Engineering, Materials Science +11

Transmission electron microscopy and Auger electron spectroscopy of silicon-on-insulator structures prepared by high-dose implantation of nitrogen

J. Petruzzello, Thomas McGee, M. H. Frommer et al. · Journal of Applied Physics · 1985 · 56 citations

Engineering, Materials Engineering, Materials Science +17

CMOS on buried nitride—A VLSI SOI technology

G. Zimmer, H. Vogt · IEEE Transactions on Electron Devices · 1983 · 55 citations

Engineering, Computer Engineering, Electrical Engineering +17

The application of nitrogen ion implantation in silicon technology

W. J. M. J. Josquin · Nuclear Instruments and Methods in Physics Research · 1983 · 51 citations

Engineering, Materials Engineering, Materials Science +12

A model for the evolution of implanted oxygen profiles in silicon

E.A. Maydell-Ondrusz, I. H. Wilson · Thin Solid Films · 1984 · 45 citations

Engineering, Materials Engineering, Materials Science +11