Laser-induced etching of gallium arsenide in a CCl_4 atmosphere: control of carbon deposition

Abstract

Laser-induced etching of gallium arsenide was performed by argon-laser irradiation in a CCl4 gas atmosphere. The conditions of laser power, scan speed, and CCl4 gas pressure under which carbon deposition into the etched grooves occurred were clarified. In situ fluorescence was observed only when both etching and carbon deposition occurred. Some lines of fluorescence spectra were estimated to be carbon (658 nm) and chlorine (821 and 836 nm). Fluorescence disappeared when carbon deposition was suppressed by the addition of 400-Torr O2 to 100-Torr CCl4.