Japanese Journal of Applied Physics · 1985 · 23 citations · 15 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor MaterialsEtching ProcessesLaser PhysicsOptical Properties Of SemiconductorsSemiconductor Device MaterialsSemiconductor LasersThermal Properties Of SemiconductorsEtchingGallium ArsenideHeat EquationPhotoluminescencePhotoluminescence SpectroscopyTemperature Rise AnalysisThermal Effects In Laser ProcessingThermal Effects In Photonic Devices
Localized etching of GaAs using an argon laser beam in an SiCl 4 atmosphere has been performed for various laser powers to investigate the threshold power, i.e., the minimum local temperature, for pyrolytic etching. Local temperature rise during laser induced etching was measured by the peak shift of in situ photoluminescence and was also estimated by solving the three dimensional heat equation. It was found that the threshold power for pyrolytic etching at an SiCl 4 pressure of 76 Torr was about 0.25 W, turning out to be about 190°C, which was in good agreement with the calculated temperature.
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Temperature dependence of the energy gap in semiconductors
Y. P. Varshni · Physica · 1967 · 5.3K citations
Temperature rise induced by a laser beam II. The nonlinear case
M. Lax · Applied Physics Letters · 1978 · 262 citations