IEEE Electron Device Letters · 1982 · 44 citations · 0 references
EngineeringElectrical EngineeringElectronic MaterialsMicroelectronicsSemiconductor DevicesCmos Circuit DesignIntegrated Circuit DesignIntegrated Circuit FabricationMetal-oxide-semiconductor Field-effect TransistorsPhotodetectorsPhysical DesignCmos Fabrication ProcessesDevice FabricationEnhancement-mode TransistorsMetallizationSiliconSilicon Wafer Processing
Gate electrodes of enhancement-mode silicon MOSFET's have been written directly using a new, mask-free laser photodeposition technique. Transistor transconductances and threshold voltages were systematically tuned by varying the gate geometry with the laser beam. The new metallization process is potentially useful for tuning and optimizing the characteristics of individual devices in integrated circuits.