Optical properties of 1.3 μm room temperature emitting InAs quantum dots covered by In0.4Ga0.6As/GaAs hetero-capping layer

A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates

Kenichi Nishi, Hideaki Saito, S. Sugou et al. · Applied Physics Letters · 1999 · 592 citations

Engineering, Materials Engineering, Materials Science +17

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Koji Muraki, S. Fukatsu, Y. Shiraki et al. · Applied Physics Letters · 1992 · 483 citations

Engineering, Materials Engineering, Materials Science +17

Energy relaxation by multiphonon processes in InAs/GaAs quantum dots

R. Heitz, M. J. Veit, N. N. Ledentsov et al. · Physical review. B, Condensed matter · 1997 · 448 citations

Natural Sciences, Materials Science, Optoelectronics +15

Excited states and energy relaxation in stacked InAs/GaAs quantum dots

R. Heitz, A. Kalburge, Qiwei Xie et al. · Physical review. B, Condensed matter · 1998 · 240 citations

Natural Sciences, Materials Engineering, Materials Science +17

Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

M. V. Maximov, A. F. Tsatsul’nikov, B. V. Volovik et al. · Physical review. B, Condensed matter · 2000 · 208 citations

Engineering, Materials Engineering, Materials Science +17