Improved quality of InGaN/GaN multiple quantum wells by a strain relief layer

Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes

Shuji Nakamura, Takashi Mukai, Masayuki Senoh · Applied Physics Letters · 1994 · 3.8K citations

Engineering, Electrical Engineering, Materials Science +17

The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

Shuji Nakamura · Science · 1998 · 1.9K citations

Engineering, Electrical Engineering, Materials Science +17

Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect

Tetsuya Takeuchi, Christian Wetzel, Shigeo Yamaguchi et al. · Applied Physics Letters · 1998 · 616 citations

Engineering, Materials Engineering, Materials Science +17

Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Applied Physics Letters · 1997 · 330 citations

Engineering, Electrical Engineering, Optoelectronics +16

Pit formation in GaInN quantum wells

Y. Chen, Tetsuya Takeuchi, Hiroshi Amano et al. · Applied Physics Letters · 1998 · 252 citations

Natural Sciences, Materials Science, Physics +12