A disturb-alleviation scheme for 3D flash memory

Abstract

Even though 3D flash memory presents a grand opportunity for huge-capacity non-volatile memory, it suffers from serious program disturb problems. Different from the past efforts in error correction codes or the work in trading the space utilization with reliability, we propose a disturb-alleviation scheme that can alleviate the negative effects caused by program disturb, especially inside a block, without introducing extra overheads on encoding or storing of extra redundant data. In particular, a methodology is proposed to reduce the data error rate by distributing unavoidable disturb errors over the flash-memory space of invalid data, with the considerations of the physical organization of 3D flash memory. A series of experiments was conducted based on real multi-layer 3D flash chips, and it showed that the proposed scheme could significantly enhance the reliability of 3D flash memory.