Program Disturb Management
Program Disturb Management is a solid-state drive reliability mechanism that mitigates unintended data corruption in untargeted memory cells during programming operations by controlling voltage interference and access patterns.
20
Publications
397
Citations
136
Authors
27
Institutions
Publications per year
2017–2026
1
20
Inherent Issues and Challenges of Program Disturbance of 3D NAND Flash Cell
Keonsoo Shim, Eun-Seok Choi, Sung-Wook Jung et al. · 2012 · 32 citations
Advanced DC-SF Cell Technology for 3-D NAND Flash
S. Aritome, Yoohyun Noh, Hyun-Seung Yoo et al. · IEEE Transactions on Electron Devices · 2013 · 25 citations
Engineering, Computer Engineering, Electrical Engineering +15
1–5 of 20
136
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4
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4
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4
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4
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1–5 of 136
27
Macronix International (Taiwan)
Hsinchu, Taiwan
4 h-index
13 publications
193 citations

National Taiwan University
Taipei, Taiwan
4 h-index
11 publications
178 citations
Samsung (South Korea)
Seoul, South Korea
3 h-index
30 publications
620 citations
Toshiba (Japan)
Tokyo, Japan
3 h-index
14 publications
390 citations
SK Group (South Korea)
Seoul, South Korea
3 h-index
49 publications
1.3K citations
Institute of Information Science, Academia Sinica
Taipei, Taiwan
3 h-index
6 publications
96 citations
Chuo University
Hachiōji, Japan
2 h-index
7 publications
154 citations
Samsung (United States)
Ridgefield Park, United States
1 h-index
16 publications
320 citations
1–8 of 27
3 publications · 58 citations
3
h-index
Conference · 1 publications · 17 citations
1
h-index
1 publications · 16 citations
1
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1 publications · 15 citations
1
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1 publications · 34 citations
1
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1–5