Program Disturb Management

Program Disturb Management is a solid-state drive reliability mechanism that mitigates unintended data corruption in untargeted memory cells during programming operations by controlling voltage interference and access patterns.

20

Publications

397

Citations

136

Authors

27

Institutions

Publications per year

2017–2026

1

Authors

136

  1. KT
    Ken Takeuchi

    Chuo University, Japan

    6 publications · 136 citations

    6

    h-index

  2. TK
    Tei‐Wei Kuo

    National Taiwan University, Taiwan

    4 publications · 65 citations

    4

    h-index

  3. YC
    Yu-Ming Chang

    Institute of Information Science, Academia Sinica, Taiwan

    4 publications · 65 citations

    4

    h-index

  4. HL
    Hsiang-Pang Li

    Macronix International (Taiwan), Taiwan

    4 publications · 65 citations

    4

    h-index

  5. YL
    Yung-Chun Li

    Macronix International (Taiwan), Taiwan

    4 publications · 65 citations

    4

    h-index

1–5 of 136

Venues

  1. IEEE Transactions on Electron Devices

    3 publications · 58 citations

    3

    h-index

  2. International Conference on Computer Aided Design

    Conference · 1 publications · 17 citations

    1

    h-index

  3. IEEE Electron Device Letters

    1 publications · 16 citations

    1

    h-index

  4. IEEE Transactions on Computers

    1 publications · 15 citations

    1

    h-index

  5. IEEE Journal of Solid-State Circuits

    1 publications · 34 citations

    1

    h-index

1–5