Physica Scripta · 1983 · 29 citations · 7 references
EngineeringMaterials EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsIntegrated Circuit DesignIntegrated Circuit FabricationMetal-semiconductor ContactsSemiconductor Device MaterialsSemiconductor InterfacesSemiconductor SurfacesContact MaterialsContact ResistanceImplantation Through Thin FilmsMagnetron SputteringMetallizationSilicide ContactsSputteringThin-film Interface Engineering
A low resistive, electrically and mechanically stable three level metallization scheme has been developed TiSi2 was adopted as a low contact resistance material to silicon, and TiN was selected as a diffusion barrier between the silicide and the A1 interconnect layer. The Ti/TiN bilayer was deposited by magnetron sputtering.
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Diffusion barriers in thin films
M.−A. Nicolet · Thin Solid Films · 1978 · 684 citations
Natural Sciences, Materials Engineering, Materials Science +10
Ohmic contacts to semiconductors
D.W. Satchell · Thin Solid Films · 1970 · 156 citations
Metallization for very-large-scale integrated circuits
P. B. Ghate · Thin Solid Films · 1982 · 57 citations