Journal of Applied Physics · 1992 · 15 citations · 4 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials CharacterizationMaterials ChemistryMaterials PhysicsCrystallization AnalysisMetalsSemiconductor Device MaterialsSilicon MaterialsThermal Properties Of MaterialsThin Film AnnealingAnnealing Time EffectsFour-point Probe MeasurementPhase SequenceRapid Thermal AnnealingSheet ResistanceSheet Resistance MeasurementThermal AnnealingThin Section Preparation
Rapid thermal annealing of Ti/Si couples has been investigated by transmission electron microscopy using cross-section preparation, four-point probe measurement of sheet resistance, and Auger electron spectroscopy. The development of crystalline phases was determined in this way with high spatial and temporal resolution. Our results indicate the decisive influence of the solubility of oxygen on the phase sequence.
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R.A. Haken · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 59 citations