A. Armigliato

Precipitation as the phenomenon responsible for the electrically inactive phosphorus in silicon

D. Nobili, A. Armigliato, M. Finnetti et al. · Journal of Applied Physics · 1982 · 133 citations

Materials Science, Ion Implantation, Engineering +12

Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates

S. Solmi, A. Parisini, R. Angelucci et al. · Physical review. B, Condensed matter · 1996 · 112 citations

Materials Engineering, Engineering, Conjugate Phase +12

Strain determination in silicon microstructures by combined convergent beam electron diffraction, process simulation, and micro-Raman spectroscopy

Vincent Senez, A. Armigliato, Ingrid De Wolf et al. · Journal of Applied Physics · 2003 · 98 citations · Full text

Engineering, Silicon Microstructures, Mechanical Engineering +20

Precipitation, aggregation, and diffusion in heavily arsenic-doped silicon

D. Nobili, S. Solmi, A. Parisini et al. · Physical review. B, Condensed matter · 1994 · 88 citations

Materials Engineering, Arsenic-doped Silicon, Ion Implantation +12

The nature of electrically inactive antimony in silicon

A. Nylandsted Larsen, Flemming Pedersen, G. Weyer et al. · Journal of Applied Physics · 1986 · 84 citations

Optical Materials, Engineering, Solid-state Chemistry +16