R. Angelucci

Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates

S. Solmi, A. Parisini, R. Angelucci et al. · Physical review. B, Condensed matter · 1996 · 112 citations

Materials Engineering, Engineering, Conjugate Phase +12

Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials

M. Servidori, R. Angelucci, F. Cembali et al. · Journal of Applied Physics · 1987 · 98 citations

Engineering, Residual Implantation Defects, Lattice Defects +18

Doping of n+ and p+ polysilicon in a dual-gate CMOS process

C. Y. Wong, J.Y.-C. Sun, Yuan Taur et al. · International Electron Devices Meeting · 1988 · 58 citations

Electrical Engineering, Engineering, Physics +9

Permeated porous silicon for hydrocarbon sensor fabrication

R. Angelucci, Antonella Poggi, L. Dori et al. · Sensors and Actuators A Physical · 1999 · 51 citations

Materials Science, Engineering, Microfabrication +4

Transient enhanced diffusion of dopants in silicon induced by implantation damage

R. Angelucci, P. Negrini, S. Solmi · Applied Physics Letters · 1986 · 50 citations

Engineering, Sb Diffusion, Implantation Damage +16