R. Angelucci - Concepedia

Author

R. Angelucci

Institute for Microelectronics and Microsystems

Also Known As

R Angelucci, R. ANGELUCCI, R. Angelucci, Renato Angelucci

Publications

977

Citations

H-Index

Concepts

All Affiliations

Institute for Microelectronics and Microsystems University of Bologna Istituto Nazionale di Fisica Nucleare, Sezione di Bologna Ferrari (Italy)

About

R. Angelucci is an author at Institute for Microelectronics and Microsystems specializing in engineering, materials science, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	23	826
2	Applied Physics	14	17	679
3	Chemistry	7	7	250
4	Chemical Engineering	3	3	73
5	Biomedical Engineering	1	1	98

R. Angelucci

Publications

868

Citations

H-Index

Page 1

	Year	Citations
Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates S. Solmi, A. Parisini, R. Angelucci, Physical review. B, Condensed matter Materials EngineeringEngineeringConjugate PhaseApplied PhysicsCarrier Concentration	1996	112
Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials M. Servidori, R. Angelucci, F. Cembali, Journal of Applied Physics EngineeringResidual Implantation DefectsLattice DefectsBiomedical EngineeringSilicon On Insulator	1987	98
Doping of n+ and p+ polysilicon in a dual-gate CMOS process C. Y. Wong, J.Y.-C. Sun, Yuan Taur, International Electron Devices Meeting Electrical EngineeringEngineeringPhysicsNanoelectronicsBias Temperature Instability	1988	58
Permeated porous silicon for hydrocarbon sensor fabrication R. Angelucci, Antonella Poggi, L. Dori, Sensors and Actuators A Physical Materials ScienceEngineeringMicrofabricationGas SensorSensor Design	1999	51
Transient enhanced diffusion of dopants in silicon induced by implantation damage R. Angelucci, P. Negrini, S. Solmi Applied Physics Letters EngineeringSb DiffusionImplantation DamageSilicon On InsulatorSemiconductor Device	1986	50
Influence of implant induced vacancies and interstitials on boron diffusion in silicon S. Solmi, R. Angelucci, F. Cembali, Applied Physics Letters Materials ScienceIon ImplantationBoron DiffusionPoint DefectsEngineering	1987	50
Electrical Properties of Thermally and Laser Annealed Polycrystalline Silicon Films Heavily Doped with Arsenic and Phosphorus S. Solmi, M. Severi, R. Angelucci, Journal of The Electrochemical Society EngineeringIntegrated CircuitsSilicon On InsulatorGrain SizeElectrical Properties	1982	45
Temperature and Time Dependence of Dopant Enhanced Diffusion in Self‐Ion Implanted Silicon R. Angelucci, F. Cembali, P. Negrini, Journal of The Electrochemical Society Materials ScienceSemiconductor TechnologyElectrical EngineeringIon ImplantationDiffusion Experiments	1987	44
Doping of n/sup +/ and p/sup +/ polysilicon in a dual-gate CMOS process C. Y. Wong, J.Y.-C. Sun, Y. Taur, Electrical EngineeringEngineeringNanoelectronicsBias Temperature InstabilityApplied Physics	2003	37
Precipitation and Diffusivity of Arsenic in Silicon R. Angelucci, G. Celotti, D. Nobili, Journal of The Electrochemical Society Materials ScienceIon ImplantationX-ray SpectroscopyEngineeringCrystalline Defects	1985	35

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