F. Cembali

Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials

M. Servidori, R. Angelucci, F. Cembali et al. · Journal of Applied Physics · 1987 · 98 citations

Engineering, Residual Implantation Defects, Lattice Defects +18

Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curves

P. Zaumseil, U. J. Winter, F. Cembali et al. · physica status solidi (a) · 1987 · 93 citations

Engineering, Silicon On Insulator, Defect Tolerance +16

Influence of first-order approximations in the incidence parameter on the simulation of symmetric and asymmetric X-ray rocking curves of heteroepitactic structures

M. Servidori, F. Cembali, Rita Fabbri et al. · Journal of Applied Crystallography · 1992 · 54 citations

X-ray Crystallography, Experimental Symmetric X-ray, X-ray Spectroscopy +22

Double-crystal X-ray diffraction analysis of low-temperature ion implanted silicon

F. Cembali, M. Servidori, Alessandro Zani · Solid-State Electronics · 1985 · 52 citations

Materials Science, Ion Implantation, Engineering +5

Influence of implant induced vacancies and interstitials on boron diffusion in silicon

S. Solmi, R. Angelucci, F. Cembali et al. · Applied Physics Letters · 1987 · 50 citations

Materials Science, Ion Implantation, Boron Diffusion +14