Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials

M. Servidori, R. Angelucci, F. Cembali, +4

Journal of Applied Physics

EngineeringResidual Implantation DefectsLattice DefectsBiomedical EngineeringSilicon On Insulator +16

Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curves

P. Zaumseil, U. J. Winter, F. Cembali, +2

physica status solidi (a)

EngineeringSilicon On InsulatorDefect ToleranceIon ImplantationTriple Crystal Diffraction +14

Influence of first-order approximations in the incidence parameter on the simulation of symmetric and asymmetric X-ray rocking curves of heteroepitactic structures

M. Servidori, F. Cembali, Rita Fabbri, +1

Journal of Applied Crystallography

X-ray CrystallographyExperimental Symmetric X-rayX-ray SpectroscopyEngineeringMechanical Engineering +20

Double-crystal X-ray diffraction analysis of low-temperature ion implanted silicon

F. Cembali, M. Servidori, Alessandro Zani

Solid-State Electronics

Materials ScienceIon ImplantationEngineeringApplied PhysicsLow-temperature Ion +3

Influence of implant induced vacancies and interstitials on boron diffusion in silicon

S. Solmi, R. Angelucci, F. Cembali, +2

Applied Physics Letters

Materials ScienceIon ImplantationBoron DiffusionPoint DefectsEngineering +12

Effect of diffuse scattering in the strain profile determination by double crystal X-ray diffraction

F. Cembali, M. Servidori, E. Gabilli, +1

physica status solidi (a)

X-ray CrystallographyEngineeringSevere Plastic DeformationMechanical EngineeringStrain Profile Determination +22

Temperature and Time Dependence of Dopant Enhanced Diffusion in Self‐Ion Implanted Silicon

R. Angelucci, F. Cembali, P. Negrini, +2

Journal of The Electrochemical Society

Materials ScienceSemiconductor TechnologyElectrical EngineeringIon ImplantationDiffusion Experiments +13

Precise X-ray relative measurement of lattice parameters of silicon wafers by multiple-crystal Bragg-case diffractometry. Computer simulation of the experiment

F. Cembali, Rita Fabbri, M. Servidori, +5

Journal of Applied Crystallography

X-ray CrystallographyEngineeringX-ray SpectroscopyMultiple-crystal Bragg-case DiffractometryFeasibility Study +21

Determination of random and aligned stopping powers for 80–300 keV protons in silicon by back-scattering measurements

F. Cembali, F. Zignani

Radiation Effects

EngineeringNuclear PhysicsReference Damage PeakKev ProtonsHeavy Ion Physic +16

Influence of Damage Depth Profile on the Characteristics of Shallow p+/n Implanted Junctions

F. Cembali, M. Seevidori, Elena Landi, +1

physica status solidi (a)

EngineeringInterconnect (Integrated Circuits)Semiconductor DeviceSemiconductorsIon Implantation +14