Influence of implant induced vacancies and interstitials on boron diffusion in silicon

Abstract

A dependence of boron anomalous diffusion on defect depth position has been observed after furnace and electron beam annealing of samples damaged with 28Si ions implanted at different energies. This behavior was correlated with the vacancy and interstitial excesses, produced under bombardment in the surface region and in depth, respectively. The spatial separation of these point defects was evidenced by the analysis of the intensity profiles obtained by double-crystal x-ray diffraction.