M. Servidori

Electrical characteristics of field-effect transistors formed with ordered α-sexithienyl

P. Ostoja, S. Guerri, S. Rossini et al. · Synthetic Metals · 1993 · 134 citations

Engineering, Electrical Engineering, Materials Science +11

Some aspects of damage annealing in ion-implanted silicon: Discussion in terms of dopant anomalous diffusion

M. Servidori, Z. Šourek, S. Solmi · Journal of Applied Physics · 1987 · 100 citations

Natural Sciences, Materials Engineering, Materials Science +17

Retarded and enhanced dopant diffusion in silicon related to implantation-induced excess vacancies and interstitials

M. Servidori, R. Angelucci, F. Cembali et al. · Journal of Applied Physics · 1987 · 99 citations

Engineering, Materials Engineering, Materials Science +17

Determination of dislocation loop size and density in ion implanted and annealed silicon by simulation of triple crystal X-ray rocking curves

P. Zaumseil, U. J. Winter, F. Cembali et al. · physica status solidi (a) · 1987 · 93 citations

Natural Sciences, Materials Engineering, Materials Science +16

Electrical activity and structural evolution correlations in laser and thermally annealed As-implanted Si specimens

A. Parisini, A. Bourret, A. Armigliato et al. · Journal of Applied Physics · 1990 · 63 citations

Natural Sciences, Materials Science, Physics +17