Concepedia
Statistics
Publications
27
Citations
1.2K
H-Index
20
Active since
1965
Affiliations
University of Bologna(Current)
Institute for Microelectronics and Microsystems
Joint Research Centre
D. Nobili is an author at University of Bologna specializing in engineering, applied physics, and materials science.
Top concepts
EngineeringApplied PhysicsMaterial ScienceSemiconductorsChemistryCrystalline DefectsPhysicsSurface ScienceChemical KineticsElectronic Materials
Publications per year
1965–2012
Precipitation as the phenomenon responsible for the electrically inactive phosphorus in silicon
D. Nobili, A. Armigliato, M. Finnetti et al. · Journal of Applied Physics · 1982 · 133 citations
Materials Science, Ion Implantation, Engineering +12
Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates
S. Solmi, A. Parisini, R. Angelucci et al. · Physical review. B, Condensed matter · 1996 · 112 citations
Materials Engineering, Engineering, Conjugate Phase +12
Lattice parameter study of silicon uniformly doped with boron and phosphorus
G. Celotti, D. Nobili, P. Ostoja · Journal of Materials Science · 1974 · 103 citations
Materials Science, Engineering, Physics +7
Precipitation as the Phenomenon Responsible for the Electrically Inactive Arsenic in Silicon
D. Nobili, A. Carabelas, G. Celotti et al. · Journal of The Electrochemical Society · 1983 · 97 citations
Engineering, Chemistry, Phenomenon Responsible +17
Precipitation, aggregation, and diffusion in heavily arsenic-doped silicon
D. Nobili, S. Solmi, A. Parisini et al. · Physical review. B, Condensed matter · 1994 · 88 citations
Materials Engineering, Arsenic-doped Silicon, Ion Implantation +12
Rows per page
1–5 of 27