2002 · 13 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsTransistor BiasingCapacitanceHigh-frequency ElectronicsIntegrated Passive DevicesMillimeter-wave Integrated CircuitsMonolithic Microwave Integrated Circuit DesignRadio-frequency Integrated Circuit DesignSilicon Microwave Integrated Circuits
An active coplanar circulator for Q-band operation based on lattice matched InAlAs/InGaAs/InP HFETs has been designed and fabricated. The active devices have a gate-width of W/sub G/=6/spl times/20 /spl mu/m and T-gates with a gate-length of L/sub G/=0.25 /spl mu/m. The circuit is fully passivated, contains all matching and biasing networks on chip and operates under zero volt gate bias. Over the entire frequency range the input reflection of the circulator is better than -15 dB and the isolation between the transmit and the receive path is better than -30 dB which is attributed to the extremely low feedback capacitance of the InP-based HFETs.
6
Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs
P. Ho, Ming-Yih Kao, P.C. Chao et al. · Electronics Letters · 1991 · 103 citations
D. Köther, B. Hopf, T. Sporkmann et al. · 2002 · 22 citations
SCFL static frequency divider using InAIAs/InGaAs/InP HEMTs
Yohtaro Umeda, K. Osafune, T. Enoki et al. · 1995 · 17 citations
Engineering, Electrical Engineering, Electronic Materials +16