EngineeringElectrical EngineeringMaterials ScienceComputational PhysicsSemiconductor DevicesTransport PhenomenaCarrier TransportDevice ModelingDevice SimulationElectronic Transport ModelingMonte Carlo MethodsMonte Carlo SimulationCarrier Transport ModelingDrift-diffusion ModelingDrift-diffusion SimulationField-effect Transistor SimulationMetal-oxide-semiconductor Field-effect Transistor ModelingMonte Carlo Device SimulationMonte Carlo Transport SimulationMosfet Modeling
Physically-based full band Monte-Carlo simulations are compared with drift-diffusion simulations for channel lengths from 150 nm to 40 nm. Errors in the drift diffusion simulated I/sub ON/, g/sub m/ and channel velocities are quantified through comparison with Monte-Carlo simulations under realistic surface scattering conditions. Suggestions for improving the drift-diffusion results are also discussed.
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