Room temperature low-threshold CW operationof 1.23 µm GaAsSb VCSELs on GaAs substrates

Abstract

Room temperature (RT) continuous-wave (CW) operation of vertical-cavity surface-emitting lasers (VCSELs) with GaAsSb quantum wells on GaAs substrates has been demonstrated. A 6 × 6 µm2 oxide-confined device exhibited RT-CW lasing with a threshold current of 0.7 mA at 1.23 µm, which is the longest reported wavelength of GaAs-based VCSELs yet reported.