Room-temperature pulsed operation of GaAsSb/GaAsvertical-cavity surface-emitting lasers

Abstract

GaAs-based long-wavelength vertical-cavity surface-emitting lasers with a GaAsSb quantum well active layer have been fabricated for the first time. Room temperature pulsed oscillation was obtained at a wavelength of 1.22 µm with a threshold current of 20 mA for devices with 25 µm square mesa.