GaAsSb: A novel material for 1.3 µm VCSELs

T. Anan, Kenichi Nishi, S. Sugou, +3

Electronics Letters

Continuous-wave operation of 1.30 µm GaAsSb/GaAsVCSELs

T. Anan, M. Yamada, Kenichi Nishi, +4

Electronics Letters

Room temperature low-threshold CW operationof 1.23 µm GaAsSb VCSELs on GaAs substrates

M. Yamada, T. Anan, K. Kurihara, +4

Electronics Letters

1Mb 4T-2MTJ nonvolatile STT-RAM for embedded memories using 32b fine-grained power gating technique with 1.0ns/200ps wake-up/power-off times

Takashi Ohsawa, Hiroki Koike, S. Miura, +6

Non-volatile MemoryEngineeringMemory DesignEmerging Memory TechnologyComputer Architecture +15

Highly Reliable High-Speed 1.1-$\mu$m-Range VCSELs With InGaAs/GaAsP-MQWs

H. Hatakeyama, T. Anan, T. Akagawa, +4

IEEE Journal of Quantum Electronics

Wide-bandgap SemiconductorPhotonicsElectrical EngineeringHighly Reliable High-speedConventional 0.85-μM Vcsels +13

Room-temperature pulsed operation of GaAsSb/GaAsvertical-cavity surface-emitting lasers

T. Anan, M. Yamada, K. Tokutome, +3

Electronics Letters

High Speed 1.1-.MU.m-Range InGaAs-Based VCSELs

Naofumi Suzuki, T. Anan, Hiroshi Hatakeyama, +5

IEICE Transactions on Electronics

Optical MaterialsEngineeringOptoelectronic DevicesElectronic DevicesElectronic Engineering +16

Low-threshold operation of 1.3-/spl mu/m GaAsSb quantum-well lasers directly grown on GaAs substrates

M. Yamada, T. Anan, K. Tokutome, +3

IEEE Photonics Technology Letters

Optical MaterialsEngineeringLaser ScienceLaser ApplicationsLaser Material +20

High-speed 1.1-μm-range InGaAs VCSELs

T. Anan, N. Suzuki, Kenichiro Yashiki, +5

PhotonicsElectrical EngineeringEngineeringHigh-speed ElectronicsOptical Transmission System +13

High-temperature characteristics of 1.3-μm InAsP-InAlGaAs ridge waveguide lasers

M. Yamada, T. Anan, K. Tokutome, +1

IEEE Photonics Technology Letters

PhotonicsOptical MaterialsEngineeringLaser ScienceOptical Properties +8