GaAsSb: A novel material for 1.3 µm VCSELs

Abstract

GaAsSb quantum wells (QWs) on GaAs substrate are proposed for the active layer of 1.3 µm VCSELs. High-quality GaAsSb QWs showed intense 1.32 µm photoluminescence at room temperature. Room-temperature pulsed operation of GaAsSb/GaAs broad stripe laser diodes at a wavelength of 1.22 µm was demonstrated for the first time.