2002 · 16 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceSemiconductor DevicesDeterioration MechanismsDevice CharacterizationDevice ReliabilityMaterial DegradationMetal ContaminationSemiconductor ReliabilityDevice DegradationGate Oxide DegradationGate Oxide LeakageGate Oxide ReliabilityMetal Degradation MechanismsReliability DegradationReliability Degradation MechanismsWear-out Mechanisms
MOSFET electrical characteristics and reliability impact with copper contamination is examined and some degradation modes are inspected. The mechanism of degradation is explained by increase of carrier trap sites in gate silicon oxide. The permissive contamination level of copper in device region is indicated by comparison between two different contamination level samples.