H. Oyamatsu

4Gbit density STT-MRAM using perpendicular MTJ realized with compact cell structure

Seoung-Ju Chung, T. Kishi, Jung Wook Park et al. · 2016 · 140 citations

Natural Sciences, Electrical Engineering, Materials Science +17

High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and Ni salicide

S. Inaba, K. Okano, Shôichi Matsuda et al. · IEEE Transactions on Electron Devices · 2002 · 75 citations

Engineering, Electrical Engineering, Microelectronics +16

23.5 A 4Gb LPDDR2 STT-MRAM with compact 9F2 1T1MTJ cell and hierarchical bitline architecture

Kwangmyoung Rho, Kenji Tsuchida, Dong-Keun Kim et al. · 2017 · 69 citations

Engineering, Computer Engineering, Electrical Engineering +17

World's first monolithic 3D-FPGA with TFT SRAM over 90nm 9 layer Cu CMOS

Tomoyuki Naito, Takeshi Ishida, T. Onoduka et al. · 2010 · 50 citations

Engineering, Computer Engineering, Electrical Engineering +16

Low-resistivity poly-metal gate electrode durable for high-temperature processing

Y. Akasaka, Sho Suehiro, K. Nakajima et al. · IEEE Transactions on Electron Devices · 1996 · 32 citations

Engineering, Electrical Engineering, Materials Science +17