2002 · 12 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyIntegrated Circuit DesignSemiconductor Device MaterialsSemiconductor Thin FilmsSilicon MaterialsGate Oxide InterfacesLow-voltage Cmos DesignParasitic CapacitanceParasitic Capacitance ReductionSilicon Thin FilmsSilicon-on-insulator CmosSilicon-on-insulator ProcessingSilicon-on-insulator Technology
An ultra-thin SOI MOSFET capable of operations at a current 1.5 times that of conventional deep sub-micron devices at low voltage is presented. This device is fabricated by a conventional MOS process on novel multi-layered SOI wafers.
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